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R1EX24032AxxS0A
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
V CC
V SS
V IH
V IL
Topr
Min
1.8
0
V CC × 0.7
? 0.3 * 1
? 40
Typ
?
0
?
?
?
Max
5.5
0
V CC + 0.5
V CC × 0.3
+85
Unit
V
V
V
V
° C
Notes: 1. V IL (min): ? 1.0 V for pulse width ≤ 50 ns.
DC Characteristics (Ta = ? 40 to +85 ° C, V CC = 1.8 V to 5.5 V)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
Output leakage current
Standby V CC current
Read V CC current
Write V CC current
Output low voltage
I LI
I LO
I SB
I CC1
I CC2
V OL2
V OL1
?
?
?
?
?
?
?
?
?
1.0
?
?
?
?
2.0
2.0
2.0
1.0
3.0
0.4
0.2
μ A
μ A
μ A
mA
mA
V
V
V CC = 5.5 V, Vin = 0 to 5.5 V
V CC = 5.5 V, Vout = 0 to 5.5 V
Vin = V SS or V CC
V CC = 5.5 V, Read at 400 kHz
V CC = 5.5 V, Write at 400 kHz
V CC = 2.7 to 5.5 V, I OL = 3.0 mA
V CC = 1.8 to 2.7 V, I OL = 1.5 mA
Capacitance (Ta = +25 ° C, f = 1 MHz)
Test
Parameter
Symbol
Min
Typ
Max
Unit
conditions
Input capacitance (A0 to A2, SCL, WP) Cin * 1
?
?
6.0
pF
Vin = 0 V
Output capacitance (SDA)
C I/O *
1
?
?
6.0
pF
Vout = 0 V
Note:
1. Not 100 % tested.
Memory cell characteristics (V CC = 1.8 V to 5.5 V)
Ta=25 ° C
Ta=85 ° C
Notes
Endurance
Data retention
1. Not 100 % tested.
Notes:
1,000k Cycles min.
100 Years min.
100k Cycles min
10 Years min.
1
1
REJ03C0345-0101 Rev.1.01 Jan. 13, 2009
Page 4 of 22
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